硅晶体材料是太阳能光伏的主要材料,其生长和制备对太阳电池和光伏产业至关重要。通过西门子技术、硅烷技术以及其他低成本技术,人们将石英砂提纯为高纯多晶硅;以此为原料,通过直拉、铸造等技术,生长成直拉硅单晶、铸造多晶硅;通过割断(切边)、切方和切片等工艺,制备成太阳电池所需的硅片。
近10多年来,太阳电池用硅晶体的生长和加工技术不断发展和完善,其成本也不断下降,为太阳能光伏的广泛应用提供了坚实的基础。在可预见的将来,硅晶体材料依然将是太阳能光伏的主要基础材料。
[1] 杨德仁.太阳电池材料[M].北京:化学工业出版社,2007.
[2] 《实用工业硅技术》编写组.实用工业硅技术[M].北京:化学工业出版社,2005.
[3] DAVIS JR,J et al..Impurities in Silicon Solar Cells[J].IEEE Trans.Electron Devices,1980,Ed-27:677-687.
[4] 国标GB/T25074—2010,太阳能级多晶硅[S].
[5] SEMI标准SEMI PV17—0611,Specification for Virgin Silicon Feedstock Materials for Photovoltaic Applications[S].
[6] 康伟超,王丽.硅材料检测技术[M].北京:化学工业出版社.2009.
[7] 国标GB/T 4061-2009,硅多晶断面夹层化学腐蚀检验方法[S].
[8] 国标GT/T 1550-1997,非本证半导体材料导电类型测试方法[S].
[9] 国标GB/T4059-2007,硅多晶气氛区熔基磷检验方法[S].
[10] 国标GB/T1551-2009,硅单晶电阻率测定方法[S].
[11] 国标GB/T4060-2007,硅多晶体真空区熔基硼检验方法[S].
[12] 国标GB/T1553,硅和锗体内少数载流子寿命测定光电导衰减法[S].
[13] SEMI MF1723,用区熔拉晶法和光谱分析法评价多晶硅棒的标准规程[S].
[14] 国标GB/T 24581—2009,低温傅立叶变换红外光谱法测量硅单晶中III、V族杂质含量的测试方法[S].
[15] 国标GB/T 13389,掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程[S].
[16] 国标GB/T 1558—2009,硅中代位碳原子含量红外吸收测量方法[S].
[17] 国标GB/T 1557—2006,硅晶体中间隙氧含量的红外吸收测量方法[S].
[18] SEMI PV10,仪器中子活化分析硅的测量方法[C].
[19] 杨旺火,李灵锋,黄荣夫,杭纬,李宁.太阳能级晶体硅中杂质的质谱检测方法[J].质谱学报,2011,32(2):121-128.
[20] 国标GB24582,酸浸取电感耦合等离子体质谱仪测定多晶硅表面金属杂质[S].
[21] Silicon production and processing employing a fluidized bed:USA,US4154870[P].1979.
[22] Silicon seed production process:USA,US4207360[P].1980.(www.xing528.com)
[23] Polysilicon fluid bed process and product:USA,US4784840[P].1988.
[24] Method for producing highest-purity silicon for electric semiconductor devices:USA,US3042494[P].1962.
[25] Method for producing pure silicon:USA,US 3146123[P].1964.
[26] Method of producing hyperpure silicon:USA,US 3200009[P].1965.
[27] Method and apparatus for manufacturing high-purity silicon rods:USA,US 4150168 [P].1979.
[28] E TEAL,BUEHLER G K.Growth of Silicon Single Crystals and of Single Crystal Silicon P-N Junctions,Phys.Rev.[J].1952,87:190.
[29] DASH W C.Silicon Crystals Free of Dislocations,J.Appl.Phys.[J].1958,29:736
[30] 阙端麟,李立本,林玉瓶.中国,CN 85100295B[P].1985.
[31] QUE DUANLIN,LI LIBEN,CHEN XIUZHI,et al.Czochralski Silicon Crystal Growth in Nitrogen Atmosphere under Reduced Pressure Czochralski Silicon Crystal,Science in China[J].1991,34:1017.
[32] 杨德仁,李立本,林玉瓶,等.氮气氛下直拉硅单晶的杂质控制,半导体技术[J].1992 (1):58.
[33] LANE R L,KACHARE A H.Multiple Czochralski Growth of Silicon Crystals from a Single Crucible,J.Cryst.Growth[J].1980,50:437.
[34] AUTHIER B H.Germany,No.250883[P].1975.
[35] DIETL J,HELMREICH D,SIRTL E.in:Crystals:Growth,Properties and Applications [M].Berlin:Springer 1981,5:57.
[36] MULLER J C,MARTINUZZI S.Multicrystalline Silicon Material:Effects of Classical and Rapid Thermal Processes,J.Mater.Res.[J].1998,13:2721.
[37] NARAYANAN S.Large Area Multicrystalline Silicon Solar Cells in High Volume Production Environment-History,Status,New Processes,Technology Transfer Issues,Solar Energy Materials &Solar Cells[J].2002,74:107.
[38] SHIRASAWA K.Mass Production Technology for Multicrystalline Si Solar Cells,Current Applied Physics[J].2001,1:509.
[39] KIM J M,KIM Y K.Growth and Characterization of 240kg Multicrystalline Silicon Ingot Grown by Directional Solidification,Solar Energy Materials &Solar Cells[J].2004, 81:217.
[40] FERRAZZA F.Large Size Multicrystalline Silicon Ingots,Solar Energy Materials &Solar Cells[J].2002,72:77.
[41] PERICHAUDA I,MARTINUZZIA S,DURAND F.Multicrystalline Silicon Prepared by Electromagnetic Continuous Pulling:Recent Results and Comparison to Directional Solidification Material,Solar Energy Materials &Solar Cells[J],2002,72:101.
[42] CISZEK T F,SCHWUTTKE G H,YANG K H.Directionally Solidified Solar-Grade Silicon Using Carbon Crucibles,Journal of crystal growth[J].1979,46(4):527-533.
[43] STODDARD N,WU B,WITTING I,WAGENER M C,et al.Casting Single Crystal Silicon:Novel Defect Profiles from BP Solar’s Mono2TM Wafers,Solid State Phenomena [J].2008,131(0):1-8.
[44] YOSHIDA T,KITAGAWARA Y.Bulk Lifetime Decreasing Phenomena Induced by Light-Illumination in High-Purity P-Type Cz-Si Crystals[R].in:Proceedings of the 4th International Symposium on High Purity Silicon IV.San Antonio,USA.1996.450.
[45] SCHMIDT J,BOTHE K.Structure and Transformation of the Metastable Boron-and Oxygen-Related Defect Center in Crystalline Silicon,Physical Review B[J].2004,69:024107.
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