探索射频前端高效毁伤研究

陈自东1，2

（1.中国工程物理研究院　复杂电磁环境科学与技术重点实验室，四川　绵阳　621999；2.中国工程物理研究院应用电子学研究所，高功率微波技术重点实验室，四川　绵阳　621999）

摘　要：微波脉冲耦合途径可以分为“前门耦合”和“后门耦合”。微波脉冲可通过前门耦合途径作用于电子设备接收机射频前端，微波电路中半导体器件一般为非线性器件，耦合进入电子系统的微波脉冲功率足够强会导致半导体器件处于非线性工作状态，对半导体器件的物理性能产生严重影响，进而影响系统正常功能的发挥。综合介绍了半导体器件非线性效应概念，开展了射频前端器件／系统的微波压制效应研究，明确半导体器件在不同微波脉冲参数条件下响应特性，分析微波脉冲作用下半导体器件物理性能降低甚至失效模式，探索射频前端高效毁伤方法。

关键词：压制效应；恢复时间；响应特性；高效毁伤

中图分类号：　文献标志码：A

基金项目：中物院复杂电磁环境科学与技术重点实验室课题（2019FZSYS05）。

作者简介：陈自东（1989—），男，助理研究员，E-mail：czdxidian＠163.com。(www.xing528.com)

Research on efficient damage detection of RF-front end

CHEN Zidong1，2

（1.Complicated Electromagnetic Environment Laboratory of CAEP，Mianyang 621999，China；2.Science and Technology on High Power Microwave Laboratory，Institute of Applied Electronics，CAEP，P.O.Box 919-1015，Mianyang 621999，China）

Abstract：The microwave pulse coupling approach can be divided into “front door coupling”and “back door coupling”.The microwave pulse can be applied to the RF front end of the electronic device receiver through the front door coupling path.The semiconductor device in the microwave circuit is generally a nonlinear device.The microwave pulse power coupled into the electronic system is strong enough to cause the semiconductor device to be in non-linear working state.The physical properties of semiconductor devices have a serious impact，which in turn affects the normal functioning of the system.This paper introduces the concept of nonlinear effects of semi⁃conductor devices，studies the microwave suppression effect of RF front-end devices／systems，clarifies the re⁃sponse characteristics of semiconductor devices under different microwave pulse parameters，and analyzes the physical properties of semiconductor devices under microwave pulses.Explore the method of efficient damage to the RF front end.

Key words：suppression effect；recovery time；response characteristic；efficient damage